https://pubs.rsc.org/en/content/articlelanding/2025/tc/d5tc00129c

Journal cover / Journal of Materials Chemistry C, Issue 21, 2025

Abstract

Annealing-free Ohmic contact of β-Ga2O3via nitrogen plasma treatment†

With the advent of the artificial intelligence era, semiconductor materials with exceptional performance are increasingly in demand. Beta-gallium oxide (β-Ga2O3) is a promising candidate for advanced semiconductor applications; however, its limited contact performance between metal electrodes remains a critical restriction that impedes its full utilization. In this study, high-quality Ohmic contacts were established through a direct nitrogen plasma treatment, effectively preserving the crystallinity of β-Ga2O3 while enhancing its electrical performance. The carrier mobility of β-Ga2O3 reached levels up to 76 cm2 V−1 s−1, approximately four times greater than the previously reported ranges (15–20 cm2 V−1 s−1). The significantly improved on/off ratio (1.7 × 1010) can suppress the device malfunction due to leakage current and resolve existing structural limitations. The results of our investigation provide insights for the advancement of β-Ga2O3 as a cutting-edge semiconductor material for ultra-low-scale and multi-output integrated circuits.